X1G005591031100日本EPSON愛普生石英晶體振蕩器的結構變化
金屬殼封裝等效電路與金屬板之間的靜電電容；L、C為壓電諧振的等效參量；R為振動磨擦損耗的等效電阻.石英晶體諧振器存在一個串聯諧振頻率fos（1/2π）,愛普生晶振同時也存在一個并聯諧振頻率fop（1/2π).由于CoC,fop與fos之間之差值很小,并且RωOL,R1/ωOC,所以諧振電路的品質因數Q非常高（可達數百萬）.
X1G005591031100日本EPSON晶振,愛普生石英晶體振蕩器
石英晶振振蕩器SPXO的總精度（包括起始精度和隨溫度、電壓及負載產生的變化）可以達到±25ppm.SPXO既無溫度補償也無溫度控制措施,其頻率溫度特性幾乎完全由石英晶體振子的頻率溫度特性所決定.在0～70℃范圍內,日產晶振SPXO的頻率穩定度通常為20～1000ppm,SPXO可以用作鐘頻振蕩器.溫度補償晶體振蕩器TCXO是通過附加的溫度補償電路使由周圍溫度變化產生的振蕩頻率變化量削減的一種石英晶體振蕩器.X1G005591031100日本EPSON晶振,愛普生石英晶體振蕩器
愛普生有源晶振編碼
型號
頻率
長X寬X高
輸出波
電源電壓
工作溫度
頻差
最大值
X1G005591006000
SG-8018CE
23.040000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591006100
SG-8018CE
28.636360MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591006200
SG-8018CE
14.430000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591006300
SG-8018CE
8.439025MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591006400
SG-8018CE
29.491200MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591006500
SG-8018CE
22.222200MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591031100
SG-8018CE
30.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591006600
SG-8018CE
19.660800MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591006700
SG-8018CE
6.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591006800
SG-8018CE
7.680000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591006900
SG-8018CE
74.250000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591007000
SG-8018CE
88.888000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.9mA
X1G005591007100
SG-8018CE
88.888000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.9mA
X1G005591007200
SG-8018CE
12.500000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591007300
SG-8018CE
148.500000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤8.1mA
X1G005591007400
SG-8018CE
74.250000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591007500
SG-8018CE
57.272720MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591007600
SG-8018CE
37.125000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591007700
SG-8018CE
19.200000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591007800
SG-8018CE
6.005284MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591007900
SG-8018CE
57.209760MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591008000
SG-8018CE
10.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591008100
SG-8018CE
133.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤8.1mA
X1G005591008200
SG-8018CE
32.400000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591008300
SG-8018CE
22.579200MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
從而使石英晶體諧振器組成的振蕩器頻率穩定度十分高,可達10－12/日.石英晶體振蕩器的振蕩頻率既可近似工作于fos處,有源晶體振蕩器也可工作在fop附近,因此石英晶體振蕩器可分串聯型和并聯型兩種.用石英晶體諧振器及其等效電路,取代LC振蕩器中構成諧振回路的電感（L）和電容（C）元件,則很容易理解晶體振蕩器的工作原理.X1G005591031100日本EPSON晶振,愛普生石英晶體振蕩器
進口愛普生晶振FA-20H,Q24FA20H00005水晶振動子
EPSON愛普生晶振C-2,Q12C20001000600水晶振動子
SMD-49無源諧振器,KDS日本晶體,1AJ250004B兩腳無源晶振