M911201NI2-20M48000,7050mm,20MHz,Microchip高性能MEMS振蕩器，美國進口晶振，Microchip晶振，型號：M9112X1系列，編碼為：M911201NI2-20M48000，高性能MEMS振蕩器，小體積晶振尺寸：7.0x5.0mm，六腳貼片晶振，工作溫度范圍：-40℃至+85℃，頻率穩定性：±50ppm，頻率為：20.000MHz，石英晶體振蕩器，石英晶振，有源晶振。具有超小型，輕薄型，高性能，高品質，耐熱及耐環境特點。應用程序：計算、存儲、網絡、電信、工業控制，SATA、SAS、以太網、PCI Express、視頻、Wi-Fi，軍事系統等。
M911201NI2-20M48000,7050mm,20MHz,Microchip高性能MEMS振蕩器，產品特點：
•2.5 MHz和170 MHz之間的任何頻率，精確到小數點后6位
•CMOS兼容輸出石英貼片晶振
•極低相位抖動：0.65 ps（12 kHz至20 MHz）
•溫度范圍廣：-40°C至+125°C
•標準6引線封裝：7.0×5.0mm，5.0×3.2mm、3.2×2.5mm、2.5×2.0mm
•2.5μA時的低待機電流（典型值）
M911201NI2-20M48000,7050mm,20MHz,Microchip高性能MEMS振蕩器,參數表
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Output Frequency
fOUT
20.0
MHz
Frequency Stability
fSTAB
–20
+20
ppm
Inclusive of initial tolerance at +25°C and
variations over operating temperature,
rated power supply voltage, and load.
–25
+25
–50
+50
Aging
fAGING
–5
+5
ppm
25°C, ±1 ppm after 1st year
Operating Temperature
Range
TOP
–40
+125
°C
Automotive
–40
+105
Extended Industrial
–40
+85
Industrial
–20
+70
Commercial
Supply Voltage
VDD
2.25
2.5
2.75
V
2.52
2.8
3.08
2.97
3.3
3.63
Current Consumption
IDD
—
27
—
mA
No load condition, f = 100 MHz,
VDD= 2.5V, 2.8V, or 3.3V
OE Disable Current
IOD
23
mA
f = 100 MHz, OE Disabled
Standby Current
ISTD
2.5
5
µA
VDD= 3.3V
Duty Cycle
DC
45
55
%
Rise Time
tr
—
1.3
—
ns
20% to 80% VDD; CL= 15 pF Standard
Drive Strength
Fall Time
t f
—
1.3
—
ns
20% to 80% VDD; CL= 15 pF Standard
Drive Strength
Output High Voltage
VOH
80%
VDD
+10 mA
Output Low Voltage
VOL
20%
VDD
–10 mA
Input High Voltage
VIH
75%
VDD
Pin 1, OE or ST
Input Low Voltage
VIL
25%
VDD
Pin 1, OE or ST
Enable Pull-Up Resistor
ZIN
1.5
MΩ
Start-Up Time
tSTART
5.5
6
ms
T = +25°C
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