Si536有源晶振,536AB125M000DG,6G路由器晶振,Silicon差分振蕩器,尺寸7.00x5.00mm,頻率125MHZ,輸出邏輯為LVPECL,電壓3.3V,頻率穩定性20ppm,腳位6-SMD,XO時鐘晶體振蕩器(標準) ,OSC晶振,貼片差分晶振,有源晶體振蕩器,LVPECL輸出晶振,LVPECL差分晶振,差分晶體振蕩器,小體積差分晶振,六腳貼片差分晶振,低抖動差分晶振,低功耗差分晶振,低相位差分晶振,低電壓差分晶振,高質量差分晶振,路由器專用差分晶振,交換機差分晶振,網絡設備差分晶振,電信專用差分晶振,具有低功耗低抖動的特點,產品特別適用于10/40/100G數據中心,10G以太網交換機/路由器,光纖通道/SAS/存儲,企業服務器,網絡,電信等領域。
Si535/536 XO采用了Skyworks Solutions先進的DSPLL電路以在高速差分頻率下提供超低抖動時鐘。 不像傳統的XO,每個輸出需要不同的晶體頻率,Si535/536差分晶體振蕩器使用一個固定晶體來提供寬范圍的輸出頻率。這種基于IC的方法允許晶體諧振器提供卓越的頻率穩定性和可靠性。此外,DSPLL時鐘合成提供出色的電源噪聲抑制,簡化了任務在高噪聲環境中產生低抖動時鐘,常見于通信系統。基于Si535/536 IC的XO是工廠編程,因此消除了與定制振蕩器。Si536有源晶振,536AB125M000DG,6G路由器晶振,Silicon差分振蕩器.
Si536有源晶振,536AB125M000DG,6G路由器晶振,Silicon差分振蕩器參數表
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
Supply Voltage1 | VDD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | ||||||||||||||||
2.5 V option | 2.25 | 2.5 | 2.75 | V | ||||||||||||||||||
Supply Current | IDD |
Output enabled LVPECL LVDS |
— — |
111 90 |
121 98 |
mA | ||||||||||||||||
Tristate mode | — | 60 | 75 | mA | ||||||||||||||||||
Output Enable (OE)2 | VIH | 0.75 x VDD | — | — | V | |||||||||||||||||
VIL | — | — | 0.5 | V | ||||||||||||||||||
Operating Temperature Range | TA | –40 | — | 85 | °C |
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
Nominal Frequency1 | fO | LVPECL/LVDS | 100 | — | 312.5 | MHz | ||||||||||||||||
Initial Accuracy | fi |
Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | ||||||||||||||||
Temperature Stability1,2 |
–7 –20 |
— — |
+7 +20 |
ppm | ||||||||||||||||||
Aging | fa | Frequency drift over first year | ±3 | ppm | ||||||||||||||||||
Frequency drift over 20 year life |
— | — | ±10 | ppm | ||||||||||||||||||
Total Stability2 | Temp stability = ±20 ppm | — | — | ±31.5 | ppm | |||||||||||||||||
Temp stability = ±7 ppm | — | — | 20 | |||||||||||||||||||
Powerup Time3 | tOSC | TA= –40°C — +85°C | 10 | ms |
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
LVPECL Output Option1 | VO | Mid-level | VDD– 1.42 | — | VDD– 1.25 | V | ||||||||||||||||
VOD | Swing (diff) | 1.1 | — | 1.9 | VPP | |||||||||||||||||
VSE | Swing (Single-ended) | 0.55 | — | 0.95 | VPP | |||||||||||||||||
LVDS Output Option2 | VO | Mid-level | 1.125 | 1.20 | 1.275 | V | ||||||||||||||||
VOD | Swing (diff) | 0.5 | 0.7 | 0.9 | VPP | |||||||||||||||||
Rise/Fall time (20/80%) | tR,tF | — | — | 350 | ps | |||||||||||||||||
Symmetry (duty cycle) | SYM | Differential | 45 | — | 55 | % |


OscillatorCrystal產品特性:
可從以下頻率中選擇
100MHz至312.5MHz
集成superior的第三代DSPLL
抖動性能和高功率
電源噪聲抑制
頻率穩定性比高3倍
基于SAW的振蕩器
LVPECL和 LVDS輸出
3.3和2.5 V電源選項
行業標準5x7毫米
封裝和引腳排列
更多相關美國Silicon晶振型號
Manufacturer Part Number原廠代碼 | Manufacturer品牌 | Series型號 | Frequency 頻率 | Voltage - Supply電壓 | Frequency Stability頻率穩定度 |
530EC200M000DG | Silicon振蕩器 | Si530 | 200MHz | 2.5V | ±7ppm |
531FC155M520DG | Silicon振蕩器 | Si531 | 155.52MHz | 2.5V | ±7ppm |
531EC156M250DG | Silicon振蕩器 | Si531 | 156.25MHz | 2.5V | ±7ppm |
530FC155M520DG | Silicon振蕩器 | Si530 | 155.52MHz | 2.5V | ±7ppm |
530BC000110DG | Silicon振蕩器 | Si530 | 148.35165MHz | 3.3V | ±7ppm |
530FC148M500DG | Silicon振蕩器 | Si530 | 148.5MHz | 2.5V | ±7ppm |
536AB125M000DG | Silicon振蕩器 | Si536 | 125MHz | 3.3V | ±20ppm |
535EB125M000DG | Silicon振蕩器 | Si535 | 125MHz | 2.5V | ±20ppm |
536EB125M000DG | Silicon振蕩器 | Si536 | 125MHz | 2.5V | ±20ppm |
535BB125M000DG | Silicon振蕩器 | Si535 | 125MHz | 3.3V | ±20ppm |
535BB156M250DG | Silicon振蕩器 | Si535 | 156.25MHz | 3.3V | ±20ppm |
535FB156M250DG | Silicon振蕩器 | Si535 | 156.25MHz | 2.5V | ±20ppm |
530EC312M500DG | Silicon振蕩器 | Si530 | 312.5MHz | 2.5V | ±7ppm |
530BC250M000DG | Silicon振蕩器 | Si530 | 250MHz | 3.3V | ±7ppm |
530EC311M040DG | Silicon振蕩器 | Si530 | 311.04MHz | 2.5V | ±7ppm |
530FC311M040DG | Silicon振蕩器 | Si530 | 311.04MHz | 2.5V | ±7ppm |
530FC622M080DG | Silicon振蕩器 | Si530 | 622.08MHz | 2.5V | ±7ppm |
531AC311M040DG | Silicon振蕩器 | Si531 | 311.04MHz | 3.3V | ±7ppm |
531BC311M040DG | Silicon振蕩器 | Si531 | 311.04MHz | 3.3V | ±7ppm |
531EC311M040DG | Silicon振蕩器 | Si531 | 311.04MHz | 2.5V | ±7ppm |
531EC622M080DG | Silicon振蕩器 | Si531 | 622.08MHz | 2.5V | ±7ppm |
531FC622M080DG | Silicon振蕩器 | Si531 | 622.08MHz | 2.5V | ±7ppm |
531FC311M040DG | Silicon振蕩器 | Si531 | 311.04MHz | 2.5V | ±7ppm |
530BC311M040DG | Silicon振蕩器 | Si530 | 311.04MHz | 3.3V | ±7ppm |
531BC622M080DG | Silicon振蕩器 | Si531 | 622.08MHz | 3.3V | ±7ppm |
531FC312M500DG | Silicon振蕩器 | Si531 | 312.5MHz | 2.5V | ±7ppm |
530EC622M080DG | Silicon振蕩器 | Si530 | 622.08MHz | 2.5V | ±7ppm |
531EC312M500DG | Silicon振蕩器 | Si531 | 312.5MHz | 2.5V | ±7ppm |
530BC622M080DG | Silicon振蕩器 | Si530 | 622.08MHz | 3.3V | ±7ppm |
531AC250M000DG | Silicon振蕩器 | Si531 | 250MHz | 3.3V | ±7ppm |
530AC311M040DG | Silicon振蕩器 | Si530 | 311.04MHz | 3.3V | ±7ppm |
530FC312M500DG | Silicon振蕩器 | Si530 | 312.5MHz | 2.5V | ±7ppm |
531EC250M000DG | Silicon振蕩器 | Si531 | 250MHz | 2.5V | ±7ppm |
530AC312M500DG | Silicon振蕩器 | Si530 | 312.5MHz | 3.3V | ±7ppm |
530EC250M000DG | Silicon振蕩器 | Si530 | 250MHz | 2.5V | ±7ppm |
530AC250M000DG | Silicon振蕩器 | Si530 | 250MHz | 3.3V | ±7ppm |
530FC250M000DG | Silicon振蕩器 | Si530 | 250MHz | 2.5V | ±7ppm |
530BC312M500DG | Silicon振蕩器 | Si530 | 312.5MHz | 3.3V | ±7ppm |
531BC312M500DG | Silicon Crystal | Si531 | 312.5MHz | 3.3V | ±7ppm |
530FC50M0000DG | Silicon振蕩器 | Si530 | 50MHz | 2.5V | ±7ppm |
535AB125M000DG | Silicon振蕩器 | Si535 | 125MHz | 3.3V | ±20ppm |
501AAA27M0000DAF | Silicon振蕩器 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA27M0000DAG | Silicon振蕩器 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
501JCA100M000CAG | Silicon振蕩器 | Si501 | 100MHz | 3.3V | ±20ppm |
501JCA100M000BAG | Silicon振蕩器 | Si501 | 100MHz | 3.3V | ±20ppm |
501HCAM032768BAF | Silicon振蕩器 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
501BCAM032768DAG | Silicon振蕩器 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501JCAM032768DAG | Silicon振蕩器 | Si501 | 32.768kHz | 3.3V | ±20ppm |
