86-0755-27838351
康華爾電子成立至今已有20多年,是國內(nèi)數(shù)一數(shù)二的晶振廠家0755-27838351,專業(yè)研發(fā)生產(chǎn)銷售石英晶振,32.768K晶振,石英晶體諧振器,貼片晶振,SAW濾波器等.采用無鉛環(huán)保材料生產(chǎn),具有精度穩(wěn)定,小體積,重量輕等特點(diǎn).國產(chǎn)晶振就選康華爾電子,質(zhì)量好,精度高,價(jià)格優(yōu)勢(shì).
康華爾電子多年來在競爭激烈的市場(chǎng)中,以技術(shù)占領(lǐng)市場(chǎng),以質(zhì)量贏得客戶,是國內(nèi)口碑極高的晶振供應(yīng)商.并且憑借自身的努力代理臺(tái)灣進(jìn)口晶振多個(gè)品牌,TXC晶振,鴻星晶振,加高晶振,亞陶晶振等.康華爾電子所提供的臺(tái)產(chǎn)晶振,均符合德國ROHS環(huán)保指令,具有高質(zhì)量,高可靠使用特性,咨詢選購熱線0755-27838351.
日本進(jìn)口晶振在國內(nèi)口碑一流,高端智能產(chǎn)品使用晶振大都會(huì)選擇日產(chǎn)晶振作為首選.康華爾電子憑借自身的努力同時(shí)代理KDS晶振,愛普生晶振,精工晶體,京瓷晶振等品牌.所代理石英晶振,石英晶體振蕩器,貼片晶體均符合歐盟ROHS環(huán)保要求,具有高精度,高品質(zhì),低插損,耐高溫等特點(diǎn).
康華爾電子是國內(nèi)優(yōu)秀的歐美進(jìn)口晶振供貨商0755-27838351,多年來憑借自身的努力,獲得CTS晶振,FOX晶振,Sitime晶振,瑞康晶振等代理權(quán)限.所代理進(jìn)口晶振,歐美晶振均符合歐盟ROHS環(huán)保指令,并且獲得ISO國際質(zhì)量管理體系認(rèn)證.市場(chǎng)常用進(jìn)口晶振封裝型號(hào)康華爾電子均有備貨,可免費(fèi)提供現(xiàn)貨樣品以及晶振技術(shù)解決方案.
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頻率：156.25MHZ
尺寸：7.0×5.0mm
Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封裝振蕩器,美國Silicon晶振,歐美有源晶振,六腳有源晶振,156.25MHZ晶體振蕩器,Si514晶振,7050mm振蕩器,XO振蕩器,OSC晶振,有源晶體振蕩器,尺寸7050mm,頻率156.25MHZ,電壓2.5V,低電壓晶振,低功耗晶振,低相位晶振,數(shù)據(jù)通信晶振,工業(yè)自動(dòng)化晶振,測(cè)試設(shè)備晶振,數(shù)字設(shè)備晶振,通信模塊晶振,物聯(lián)網(wǎng)晶振.
Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封裝振蕩器,美國Silicon晶振,歐美有源晶振,六腳有源晶振,156.25MHZ晶體振蕩器,Si514晶振,7050mm振蕩器,XO振蕩器,OSC晶振,有源晶體振蕩器,尺寸7050mm,頻率156.25MHZ,電壓2.5V,低電壓晶振,低功耗晶振,低相位晶振,數(shù)據(jù)通信晶振,工業(yè)自動(dòng)化晶振,測(cè)試設(shè)備晶振,數(shù)字設(shè)備晶振,通信模塊晶振,物聯(lián)網(wǎng)晶振.
Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封裝振蕩器特點(diǎn):
可編程到任何頻率從100kHz到250MHz
00.026 ppb頻率調(diào)諧決議
OOE上的閃光抑制，電源on和頻率轉(zhuǎn)換
低抖動(dòng)操作，2到4周的交付周期,總體穩(wěn)定性包括10年變老
綜合生產(chǎn)試驗(yàn)，覆蓋范圍包括晶體ESR和DLD
用于電源的片上LDO噪聲濾波
3.3、2.5或1.8 V操作，差分（LVPECL、LVDS、HCSL）或CMOS輸出選項(xiàng)
可選集成1:2 CMOS扇出緩存有源晶振
行業(yè)標(biāo)準(zhǔn)5x7、3.2x5和2.5x3.2 mm包裝,–40至85℃操作
Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封裝振蕩器 參數(shù)表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units | ||||||||
| Supply Voltage | V DD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | ||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | ||||||||||
| 1.8 V option | 1.71 | 1.8 | 1.89 | V | ||||||||||
| Supply Current | IDD |
CMOS, 100 MHz, single-ended |
— | 21 | 26 | mA | ||||||||
|
LVDS (output enabled) |
— | 19 | 23 | mA | ||||||||||
|
LVPECL (output enabled) |
— | 39 | 43 | mA | ||||||||||
|
HCSL (output enabled) |
— | 41 | 44 | mA | ||||||||||
|
Tristate (output disabled) |
— | — | 18 | mA | ||||||||||
| Operating Temperature | TA | –40 | — | 85 | oC | |||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units | ||||||||
| SDA, SCL Input Voltage High | VIH | 0.80 x V DD | — | — | V | |||||||||
| SDA, SCL Input Voltage Low | VIL | — | — | 0.20 x V DD | V | |||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units | ||||||||
|
Programmable Frequency Range |
FO | CMOS, Dual CMOS | 0.1 | — | 212.5 | MHz | ||||||||
| FO | LVDS/LVPECL/HCSL | 0.1 | — | 250 | MHz | |||||||||
|
Frequency Reprogramming Resolution |
M RES | — | 0.026 | — | ppb | |||||||||
|
Frequency Range for Small Frequency Change (Continuous Glitchless Output) |
From center frequency | –1000 | — | +1000 | ppm | |||||||||
|
Settling time for Small Frequency Change |
<±1000 ppm from center frequency |
— | — | 100 | µs | |||||||||
|
Settling time for Large Frequency Change (Out- put Squelched during Fre- quency Transition) |
>±1000 ppm from center frequency |
— | — | 10 | ms | |||||||||
| Total Stability* | Frequency Stability Grade C | –30 | — | +30 | ppm | |||||||||
| Frequency Stability Grade B | –50 | — | +50 | ppm | ||||||||||
| Frequency Stability Grade A | –100 | — | +100 | ppm | ||||||||||
| Temperature Stability | Frequency Stability Grade C | –20 | — | +20 | ppm | |||||||||
| Frequency Stability Grade B | –25 | — | +25 | ppm | ||||||||||
| Frequency Stability Grade A | –50 | — | +50 | ppm | ||||||||||
| Startup Time | TSU |
Minimum V DD until output frequency (FO) within specification |
— | — | 10 | ms | ||||||||
| Disable Time | TD | FO< 10 MHz | — | — | 40 | µs | ||||||||
| FO> 10 MHz | — | — | 5 | µs | ||||||||||
| Enable Time | TE | FO< 10 MHz | — | — | 60 | µs | ||||||||
| FO> 10 MHz | — | — | 20 | µs | ||||||||||
Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封裝振蕩器 尺寸圖
| 原廠代碼 | 品牌 | 型號(hào) | 頻率 | 電壓 | 頻率穩(wěn)定度 |
| 530AC312M500DG | Silicon振蕩器 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 530EC250M000DG | Silicon振蕩器 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530AC250M000DG | Silicon振蕩器 | Si530 | 250MHz | 3.3V | ±7ppm |
| 530FC250M000DG | Silicon振蕩器 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530BC312M500DG | Silicon振蕩器 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 530FC50M0000DG | Silicon振蕩器 | Si530 | 50MHz | 2.5V | ±7ppm |
| 530AA156M250DG | Silicon振蕩器 | Si530 | 156.25MHz | 3.3V | ±50ppm |
| 530FB100M000DG | Silicon振蕩器 | Si530 | 100MHz | 2.5V | ±20ppm |
| 530BC125M000DG | Silicon振蕩器 | Si530 | 125MHz | 3.3V | ±7ppm |
| 530EC125M000DG | Silicon振蕩器 | Si530 | 125MHz | 2.5V | ±7ppm |
| 591BB300M000DG | Silicon振蕩器 | Si591 | 300MHz | 3.3V | ±25ppm |
| 530CA28M6000DG | Silicon振蕩器 | Si530 | 28.6MHz | 3.3V | ±50ppm |
| 530AC125M000DGR | Silicon振蕩器 | Si530 | 125MHz | 3.3V | ±7ppm |
| 530BC125M000DGR | Silicon振蕩器 | Si530 | 125MHz | 3.3V | ±7ppm |
| 530EC125M000DGR | Silicon振蕩器 | Si530 | 125MHz | 2.5V | ±7ppm |
| 530AC106M250DGR | Silicon振蕩器 | Si530 | 106.25MHz | 3.3V | ±7ppm |
| 530BC106M250DGR | Silicon振蕩器 | Si530 | 106.25MHz | 3.3V | ±7ppm |
| 530EC106M250DGR | Silicon振蕩器 | Si530 | 106.25MHz | 2.5V | ±7ppm |
| 530FC106M250DGR | Silicon振蕩器 | Si530 | 106.25MHz | 2.5V | ±7ppm |
| 530BC25M0000DGR | Silicon振蕩器 | Si530 | 25MHz | 3.3V | ±7ppm |
| 514GBB000118AAG | Silicon振蕩器 | Si514 | 156.25MHz | 2.5V | ±25ppm |
| 530RB150M000DG | Silicon振蕩器 | Si530 | 150MHz | 2.5V | ±20ppm |
| 530RB200M000DG | Silicon振蕩器 | Si530 | 200MHz | 2.5V | ±20ppm |
| 530BC100M000DG | Silicon振蕩器 | Si530 | 100MHz | 3.3V | ±20ppm |
| 530AC155M520DGR | Silicon振蕩器 | Si530 | 155.52MHz | 3.3V | ±7ppm |
| 530AC156M250DGR | Silicon振蕩器 | Si530 | 156.25MHz | 3.3V | ±7ppm |
| 530BC155M520DGR | Silicon振蕩器 | Si530 | 155.52MHz | 3.3V | ±7ppm |
| 530BC156M250DGR | Silicon振蕩器 | Si530 | 156.25MHz | 3.3V | ±7ppm |
| 530EC155M520DGR | Silicon振蕩器 | Si530 | 155.52MHz | 2.5V | ±7ppm |
| 530EC156M250DGR | Silicon振蕩器 | Si530 | 156.25MHz | 2.5V | ±7ppm |
| 530FC155M520DGR | Silicon振蕩器 | Si530 | 155.52MHz | 2.5V | ±7ppm |
| 530FC156M250DGR | Silicon振蕩器 | Si530 | 156.25MHz | 2.5V | ±7ppm |
| 530AC187M500DGR | Silicon振蕩器 | Si530 | 187.5MHz | 3.3V | ±7ppm |
| 530BC187M500DGR | Silicon振蕩器 | Si530 | 187.5MHz | 3.3V | ±7ppm |
| 530EC187M500DGR | Silicon振蕩器 | Si530 | 187.5MHz | 2.5V | ±7ppm |
| 530FC187M500DGR | Silicon振蕩器 | Si530 | 187.5MHz | 2.5V | ±7ppm |
| 530AC000110DGR | Silicon振蕩器 | Si530 | 148.35165MHz | 3.3V | ±7ppm |
| 530AC148M500DGR | Silicon振蕩器 | Si530 | 148.5MHz | 3.3V | ±7ppm |
| 530AC200M000DGR | Silicon振蕩器 | Si530 | 200MHz | 3.3V | ±7ppm |
| 530BC000110DGR | Silicon振蕩器 | Si530 | 148.35165MHz | 3.3V | ±7ppm |
| 530BC148M500DGR | Silicon振蕩器 | Si530 | 148.5MHz | 3.3V | ±7ppm |
| 530BC200M000DGR | Silicon振蕩器 | Si530 | 200MHz | 3.3V | ±7ppm |
| 530EC000110DGR | Silicon振蕩器 | Si530 | 148.35165MHz | 2.5V | ±7ppm |
| 530EC148M500DGR | Silicon振蕩器 | Si530 | 148.5MHz | 2.5V | ±7ppm |
| 530EC200M000DGR | Silicon振蕩器 | Si530 | 200MHz | 2.5V | ±7ppm |
| 530FC000110DGR | Silicon振蕩器 | Si530 | 148.35165MHz | 2.5V | ±7ppm |
| 530FC148M500DGR | Silicon振蕩器 | Si530 | 148.5MHz | 2.5V | ±7ppm |
| 530BC130M250DG | Silicon振蕩器 | Si530 | 130.25MHz | 3.3V | ±7ppm |
| 530BC154M000DG | Silicon振蕩器 | Si530 | 154MHz | 3.3V | ±7ppm |
| 530AC312M500DGR | Silicon振蕩器 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 530BC312M500DGR | Silicon振蕩器 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 530EC312M500DGR | Silicon振蕩器 | Si530 | 312.5MHz | 2.5V | ±7ppm |
| 530FC312M500DGR | Silicon振蕩器 | Si530 | 312.5MHz | 2.5V | ±7ppm |
| 530AC250M000DGR | Silicon振蕩器 | Si530 | 250MHz | 3.3V | ±7ppm |
| 530AC311M040DGR | Silicon晶振 | Si530 | 311.04MHz | 3.3V | ±7ppm |
| 530AC622M080DGR | Silicon振蕩器 | Si530 | 622.08MHz | 3.3V | ±7ppm |
| 530BC250M000DGR | Silicon振蕩器 | Si530 | 250MHz | 3.3V | ±7ppm |
| 530BC311M040DGR | Silicon振蕩器 | Si530 | 311.04MHz | 3.3V | ±7ppm |
| 530BC622M080DGR | Silicon振蕩器 | Si530 | 622.08MHz | 3.3V | ±7ppm |
| 530EC250M000DGR | Silicon振蕩器 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530EC311M040DGR | Silicon振蕩器 | Si530 | 311.04MHz | 2.5V | ±7ppm |
| 530EC622M080DGR | Silicon振蕩器 | Si530 | 622.08MHz | 2.5V | ±7ppm |
| 530FC250M000DGR | Silicon振蕩器 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530FC311M040DGR | Silicon振蕩器 | Si530 | 311.04MHz | 2.5V | ±7ppm |
| 530FC622M080DGR | Silicon振蕩器 | Si530 | 622.08MHz | 2.5V | ±7ppm |
| 530CA40M0000BG | Silicon振蕩器 | Si530 | 40MHz | 3.3V | ±50ppm |
CMOS,FCD-Tech移動(dòng)設(shè)備晶振,SX5CB-15F00E-32MHz,5032mm,32MHZ振蕩器,FCD-Tech水晶振蕩子,四腳有源晶振,OSC貼片晶振,5032mm有源晶振,石英有源振蕩器,32MHZ石英晶體振蕩器,時(shí)鐘晶體振蕩器,尺寸5.0x3.2mm,頻率32MHZ,輸出CMOS,低電壓晶振,低損耗晶振,低抖動(dòng)晶振,無線局域網(wǎng)晶振,移動(dòng)設(shè)備晶振,便攜式設(shè)備晶振,數(shù)字音頻晶振.
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電話：+86-0755-278383514
手機(jī)：138-2330-0879
QQ：632862232
地址：廣東深圳市寶安寶安大道東95號(hào)浙商銀行大廈1905
康華爾微信
