,,

當前位置：首頁 » 歐美晶振 » Silicon晶振 » 511FCA100M000BAG-Silicon差分振蕩器-6G交換機晶振-Si511有源晶振

prevnext

511FCA100M000BAG-Silicon差分振蕩器-6G交換機晶振-Si511有源晶振

頻率：100MHZ

尺寸：5.00mmx3.20mm

511FCA100M000BAG-Silicon差分振蕩器-6G交換機晶振-Si511有源晶振，尺寸為5.00mmx3.20mm，頻率100MHZ，電壓為2.5V，頻率穩定性20ppm.輸出為LVDS，Silicon Crystal，Silicon有源振蕩器，差分晶振LVDS，低功耗振蕩器，有源貼片晶振，XO時鐘振蕩器，SMD振蕩器，低電壓晶振，低相噪振蕩器，低相位差分晶振，低抖動差分晶振，Si510/511 XO采用了Skyworks Solutions公司先進的DSPLL技術提供從100千赫到250兆赫的任何頻率。不像傳統的XO其中每個輸出頻率需要不同的晶體，Si510/511使用一個固定晶體和Skyworks Solutions的專有DSPLL合成器在這個范圍內產生任何頻率。

這解決方案提供卓越的電源噪聲抑制，簡化低抖動時鐘在嘈雜的環境中產生。晶體ESR和DLD是獨立的生產測試，以保證性能和提高可靠性。Si510/511差分晶體振蕩器可在工廠配置，適用于各種用戶規格;包括頻率、電源電壓、輸出格式、輸出使能極性、和穩定性。特定的配置是在出廠時編程的運輸，消除了漫長的交貨期和非經常性的工程費用與自定義頻率振蕩器相關聯。511FCA100M000BAG-Silicon差分振蕩器-6G交換機晶振-Si511有源晶振.

訂購熱線：86-0755-27838351

511FCA100M000BAG-Silicon差分振蕩器-6G交換機晶振-Si511有源晶振 參數表

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Supply Voltage	V DD	3.3 V option	2.97	3.3	3.63	V
		2.5 V option	2.25	2.5	2.75	V
		1.8 V option	1.71	1.8	1.89	V
Supply Current	IDD	CMOS, 100 MHz, single-ended	—	21	26	mA
		LVDS (output enabled)	—	19	23	mA
		LVPECL (output enabled)	—	39	43	mA
		HCSL (output enabled)	—	41	44	mA
		Tristate (output disabled)	—	—	18	mA
OE "1" Setting	VIH	See Note	0.80 x V DD	—	—	V
OE "0" Setting	VIL	See Note	—	—	0.20 x V DD	V
OE Internal Pull-Up/Pull- Down Resistor*	RI		—	45	—	kΩ
Operating Temperature	TA		–40	—	85	oC

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Supply Voltage	V DD	3.3 V option	2.97	3.3	3.63	V
		2.5 V option	2.25	2.5	2.75	V
		1.8 V option	1.71	1.8	1.89	V
Supply Current	IDD	CMOS, 100 MHz, single-ended	—	21	26	mA
		LVDS (output enabled)	—	19	23	mA
		LVPECL (output enabled)	—	39	43	mA
		HCSL (output enabled)	—	41	44	mA
		Tristate (output disabled)	—	—	18	mA
OE "1" Setting	VIH	See Note	0.80 x V DD	—	—	V
OE "0" Setting	VIL	See Note	—	—	0.20 x V DD	V
OE Internal Pull-Up/Pull- Down Resistor*	RI		—	45	—	kΩ
Operating Temperature	TA		–40	—	85	oC

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
CMOS Output Logic High	V OH		0.85 x V DD	—	—	V
CMOS Output Logic Low	VOL		—	—	0.15 x V DD	V
CMOS Output Logic High Drive	I OH	3.3 V	–8	—	—	mA
		2.5 V	–6	—	—	mA
		1.8 V	–4	—	—	mA
CMOS Output Logic Low Drive	I OL	3.3 V	8	—	—	mA
		2.5 V	6	—	—	mA
		1.8 V	4	—	—	mA
CMOS Output Rise/Fall Time (20 to 80% V DD)	TR/T F	0.1 to 212.5 MHz, CL = 15 pF	0.45	0.8	1.2	ns
		0.1 to 212.5 MHz, CL = no load	0.3	0.6	0.9	ns
LVPECL Output Rise/Fall Time (20 to 80% VDD)	TR/T F		100	—	565	ps
HCSL Output Rise/Fall Time (20 to 80% VDD)	TR/T F		100	—	470	ps
LVDS Output Rise/Fall Time (20 to 80% VDD)	TR/T F		350	—	800	ps
LVPECL Output Common Mode	VOC	50 Ω to V DD – 2 V, single-ended	—	V DD – 1.4 V	—	V
LVPECL Output Swing	VO	50 Ω to V DD – 2 V, single-ended	0.55	0.8	0.90	VPPSE
LVDS Output Common Mode	VOC	100 Ω line-line V DD= 3.3/2.5 V	1.13	1.23	1.33	V
		100 Ω line-line, V DD= 1.8 V	0.83	0.92	1.00	V
LVDS Output Swing	VO	Single-ended, 100 Ω differential termination	0.25	0.35	0.45	VPPSE
HCSL Output Common Mode	VOC	50 Ω to ground	0.35	0.38	0.42	V
HCSL Output Swing	VO	Single-ended	0.58	0.73	0.85	VPPSE
Duty Cycle	DC	All formats	48	50	52	%

511FCA100M000BAG-Silicon差分振蕩器-6G交換機晶振-Si511有源晶振 尺寸圖

OscillatorCrystal產品特性：

支持來自的任何頻率100kHz至250MHz

低抖動操作

完全穩定包括10年老化

全面的生產測試

覆蓋范圍包括晶體ESR和DLD片內LDO電源調節器

電源噪聲濾波 3.3、2.5或1.8V工作電壓差異(LVPECL，LVDS， HCSL)或CMOS輸出選項

可選集成1:2CMOS扇出緩沖器

OE上的不良抑制和通電

行業標準5x7、3.2x5、和2.5x3.2毫米封裝

無鉛，符合RoHS標準

–40至85攝氏度操作

更多相關Silicon晶振型號

Manufacturer Part Number原廠代碼	Manufacturer品牌	Series型號	Frequency 頻率	Voltage - Supply電壓	Frequency Stability頻率穩定度
511BBA148M500AAG	Silicon Labs	Si511	148.5MHz	3.3V	±25ppm
511FBA200M000BAG	Silicon Labs	Si511	200MHz	2.5V	±25ppm
510BBA200M000BAG	Silicon Labs	Si510	200MHz	3.3V	±25ppm
511FBA200M000AAG	Silicon Labs	Si511	200MHz	2.5V	±25ppm
511ABA25M0000BAG	Silicon Labs	Si511	25MHz	3.3V	±25ppm
511FCA100M000BAG	Silicon Labs	Si511	100MHz	2.5V	±20ppm
511BCA100M000BAG	Silicon Labs	Si511	100MHz	3.3V	±20ppm
530BA125M000DG	Silicon Labs	Si530	125MHz	3.3V	±50ppm
531FB125M000DG	Silicon Labs	Si531	125MHz	2.5V	±20ppm
530BB100M000DG	Silicon Labs	Si530	100MHz	3.3V	±20ppm
530FC156M250DG	Silicon Labs	Si530	156.25MHz	2.5V	±7ppm
510ABA125M000BAG	Silicon Labs	Si510	125MHz	3.3V	±25ppm
511BBA74M2500BAG	Silicon Labs	Si511	74.25MHz	3.3V	±25ppm
510BBA156M250BAG	Silicon Labs	Si510	156.25MHz	3.3V	±25ppm
511ABA156M250BAG	Silicon Labs	Si511	156.25MHz	3.3V	±25ppm
510FBA200M000BAG	Silicon Labs	Si510	200MHz	2.5V	±25ppm
510ABA200M000BAG	Silicon Labs	Si510	200MHz	3.3V	±25ppm
530FA156M250DG	Silicon Labs	Si530	156.25MHz	2.5V	±50ppm
531BC000110DG	Silicon Labs	Si531	148.35165MHz	3.3V	±7ppm
535FB125M000DG	Silicon Labs	Si535	125MHz	2.5V	±20ppm
SI50122-A4-GM	Silicon Labs	SI50122-A4	100MHz	2.25 V ~ 3.63 V	+100ppm
511ABA156M250AAGR	Silicon Labs	Si511	156.25MHz	3.3V	±25ppm
530FC125M000DG	Silicon Labs	Si530	125MHz	2.5V	±7ppm
531BC200M000DG	Silicon Labs	Si531	200MHz	3.3V	±7ppm
531BC250M000DG	Silicon Labs	Si531	250MHz	3.3V	±7ppm
530AC622M080DG	Silicon Labs	Si530	622.08MHz	3.3V	±7ppm
511FBA100M000BAG	Silicon Labs	Si511	100MHz	2.5V	±25ppm
511BBA106M250BAG	Silicon Labs	Si511	106.25MHz	3.3V	±25ppm
510BBA156M250AAG	Silicon Labs	Si510	156.25MHz	3.3V	±25ppm
510ABA156M250AAG	Silicon Labs	Si510	156.25MHz	3.3V	±25ppm
531BC125M000DG	Silicon Labs	Si531	125MHz	3.3V	±7ppm
530AC125M000DG	Silicon Labs	Si530	125MHz	3.3V	±7ppm
531FB106M250DG	Silicon Labs	Si531	106.25MHz	2.5V	±20ppm
531AC156M250DG	Silicon Labs	Si531	156.25MHz	3.3V	±7ppm
531AC200M000DG	Silicon Labs	Si531	200MHz	3.3V	±7ppm
531BC148M500DG	Silicon Labs	Si531	148.5MHz	3.3V	±7ppm
530AC200M000DG	Silicon Labs	Si530	200MHz	3.3V	±7ppm
530BC200M000DG	Silicon Labs	Si530	200MHz	3.3V	±7ppm
531BC156M250DG	Silicon Labs	Si531	156.25MHz	3.3V	±7ppm
530FC200M000DG	Silicon Labs	Si530	200MHz	2.5V	±7ppm
536BB156M250DG	Silicon Labs	Si536	156.25MHz	3.3V	±20ppm
536FB156M250DG	Silicon Labs	Si536	156.25MHz	2.5V	±20ppm
536AB156M250DG	Silicon Labs	Si536	156.25MHz	3.3V	±20ppm
510FBA125M000BAG	Silicon Labs	Si510	125MHz	2.5V	±25ppm
511BBA000149BAG	Silicon Labs	Si511	74.175824MHz	3.3V	±25ppm
510FBA100M000BAG	Silicon Labs	Si510	100MHz	2.5V	±25ppm
511FBA106M250BAG	Silicon晶振	Si511	106.25MHz	2.5V	±25ppm
510BBA106M250BAG	Silicon Labs	Si510	106.25MHz	3.3V	±25ppm
511BBA125M000AAG	Silicon Labs	Si511	125MHz	3.3V	±25ppm
510BBA100M000AAG	Silicon Labs	Si510	100MHz	3.3V	±25ppm
510BBA125M000AAG	Silicon Labs	Si510	125MHz	3.3V	±25ppm
511FBA100M000AAG	Silicon Labs	Si511	100MHz	2.5V	±25ppm
511BBA106M250AAG	Silicon Labs	Si511	106.25MHz	3.3V	±25ppm
511FBA148M500BAG	Silicon Labs	Si511	148.5MHz	2.5V	±25ppm
510FBA148M500BAG	Silicon Labs	Si510	148.5MHz	2.5V	±25ppm
511BBA156M250BAG	Silicon Labs	Si511	156.25MHz	3.3V	±25ppm
511FBA156M250BAG	Silicon Labs	Si511	156.25MHz	2.5V	±25ppm
510BBA148M500BAG	Silicon Labs	Si510	148.5MHz	3.3V	±25ppm
511BBA156M250AAG	Silicon Labs	Si511	156.25MHz	3.3V	±25ppm
510FBA156M250AAG	Silicon Labs	Si510	156.25MHz	2.5V	±25ppm
511ABA155M520AAG	Silicon Labs	Si511	155.52MHz	3.3V	±25ppm
510FBA148M500AAG	Silicon Labs	Si510	148.5MHz	2.5V	±25ppm
511BBA155M520AAG	Silicon Labs	Si511	155.52MHz	3.3V	±25ppm
510BBA148M500AAG	Silicon Labs	Si510	148.5MHz	3.3V	±25ppm
510ABA148M500AAG	Silicon Labs	Si510	148.5MHz	3.3V	±25ppm
510DBA100M000AAG	Silicon Labs	Si510	100MHz	3.3V	±25ppm
531AC125M000DG	Silicon Labs	Si531	125MHz	3.3V	±7ppm

511FCA100M000BAG Silicon差分振蕩器 6G交換機晶振 Si511有源晶振

采購：511FCA100M000BAG-Silicon差分振蕩器-6G交換機晶振-Si511有源晶振

*聯系人：
*手機：
公司名稱：
郵箱：
電話：
地址：
*采購意向：
*驗證碼：

跟此產品相關的產品 / Related Products

NKG有源晶振,7050mm,SCO36B40.000MTS-EXT,SCO3系列,40MHZ

NKG有源晶振,7050mm,SCO36B40.000MTS-EXT,SCO3系列,40MHZ,OSC振蕩器,有源貼片晶振,7050mm微型晶振,40MHZ振蕩器,SCO3系列晶振,四腳貼片晶振,時鐘晶體振蕩器,尺寸7.0×5.0mm,頻率40MHZ,低電壓晶振,低功耗晶振,低抖動晶振,低相位晶振,低相噪晶振,汽車級晶振,微處理器晶振,無線局域網晶振,機頂盒晶振,便攜式設備晶振.

FCD-Tech差分晶振,LVDS,SX3LK-33F20-125MHZ,3225mm,125MHZ低抖動晶振

FCD-Tech差分晶振,LVDS,SX3LK-33F20-125MHZ,3225mm,125MHZ低抖動晶振,荷蘭進口晶振,有源FCD-Tech晶振,LVDS差分輸出晶振,3225小體積有源晶振,125MHZ時鐘晶體振蕩器,差分晶體振蕩器,有源貼片晶振,尺寸3.2x2.5mm,頻率125MHZ,電壓3.3V,輸出LVDS,低抖動晶振,低相位晶振,低相噪晶振,機頂盒專用晶振,智能家居晶振,多媒體設備晶振,通訊模塊晶振.

NKG有源晶振,SCH3高速網絡晶振,SCH36B100.000MTS-EXT,7050mm

NKG有源晶振,SCH3高速網絡晶振,SCH36B100.000MTS-EXT,7050mm,NKG振蕩器,石英晶體振蕩器,六腳有源振蕩器,OSC晶振,有源貼片晶振,有源晶體振蕩器,100MHZ有源晶振,7050mm微型晶振,尺寸7.0×5.0mm,頻率100MHZ,電壓3.3V,輸出LVCMOS,低抖動晶振,低相位晶振,低相噪晶振,低老化晶振,無線局域網晶振,高速網絡晶振.